The device is suitable for bidirectional switching in 24 V systems with best RSS(ON) as low as 10 mW typical and lowest RS-S(ON) per area in the industry
MALVERN, Pa. — December 11, 2019 — Vishay Intertechnology, Inc. today announced the SiSF20DN, a new common-drain dual N-channel 60 V MOSFET in a small thermally enhanced PowerPAK® 1212-8SCD package. The Vishay Siliconix SiSF20DN is the industry’s lowest RS-S(ON) 60 V common-drain device designed to improve power density and efficiency in battery management systems, in-line and wireless chargers, DC/DC converters, and power supplies.
The recently announced dual-chip MOSFET features as low as 10 mW typical RS-S(ON) at 10V, the lowest on-resistance 60V device in a 3mm x 3mm package, and 42.5% lower than the second-largest package size , which is 89% lower than Vishay’s previous-generation devices.
Thereby reducing the power channel voltage drop, reducing power consumption and improving efficiency. To increase power density, the RS1S2(ON) area product of the SiSF20DN is 46.6 % lower than the second-ranked alternative MOSFET, even including the larger 6 mm x 5 mm package solution.
To save PCB space, reduce component count, and simplify design, the device features an optimized package structure with two monolithically integrated TrenchFET® fourth-generation n-channel MOSFETs in a common-drain configuration. The SiSF20DN source contacts are arranged side-by-side, increasing the connection to increase the PCB contact area and further reducing the resistivity compared to traditional dual-package devices. This design makes the MOSFET suitable for bidirectional switching in 24 V systems and industrial applications including factory automation, power tools, drones, motor drives, white goods, robotics, security/surveillance and smoke alarms.
SiSF20DN is 100 % Rg and UIS tested, RoHS compliant and halogen free.
Samples and production quantities of the new MOSFETs are available now, with lead times of 30 weeks for bulk orders.
Introduction to VISHAY
Vishay Intertechnology, Inc. is a Fortune 1000 company listed on the New York Stock Exchange (VSH) and is a global leader in discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive Electronic components (resistors, inductors, capacitors) one of the largest manufacturers. These components are used in virtually all types of electronic equipment and equipment in the industrial, computing, automotive, consumer, communications, defense, aerospace, power, and medical markets. Product innovation, successful acquisition strategy, and “one-stop” service have made Vishay a global industry leader.
PowerPAK is a registered trademark of Siliconix Corporation.
The device is suitable for bidirectional switching in 24 V systems with best RSS(ON) as low as 10 mW typical and lowest RS-S(ON) per area in the industry
MALVERN, Pa. — December 11, 2019 — Vishay Intertechnology, Inc. today announced the SiSF20DN, a new common-drain dual N-channel 60 V MOSFET in a small thermally enhanced PowerPAK® 1212-8SCD package. The Vishay Siliconix SiSF20DN is the industry’s lowest RS-S(ON) 60 V common-drain device designed to improve power density and efficiency in battery management systems, in-line and wireless chargers, DC/DC converters, and power supplies.
The recently announced dual-chip MOSFET features as low as 10 mW typical RS-S(ON) at 10V, the lowest on-resistance 60V device in a 3mm x 3mm package, and 42.5% lower than the second-largest package size , which is 89% lower than Vishay’s previous-generation devices.
Thereby reducing the power channel voltage drop, reducing power consumption and improving efficiency. To increase power density, the RS1S2(ON) area product of the SiSF20DN is 46.6 % lower than the second-ranked alternative MOSFET, even including the larger 6 mm x 5 mm package solution.
To save PCB space, reduce component count, and simplify design, the device features an optimized package structure with two monolithically integrated TrenchFET® fourth-generation n-channel MOSFETs in a common-drain configuration. The SiSF20DN source contacts are arranged side-by-side, increasing the connection to increase the PCB contact area and further reducing the resistivity compared to traditional dual-package devices. This design makes the MOSFET suitable for bidirectional switching in 24 V systems and industrial applications including factory automation, power tools, drones, motor drives, white goods, robotics, security/surveillance and smoke alarms.
SiSF20DN is 100 % Rg and UIS tested, RoHS compliant and halogen free.
Samples and production quantities of the new MOSFETs are available now, with lead times of 30 weeks for bulk orders.
Introduction to VISHAY
Vishay Intertechnology, Inc. is a Fortune 1000 company listed on the New York Stock Exchange (VSH) and is a global leader in discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive Electronic components (resistors, inductors, capacitors) one of the largest manufacturers. These components are used in virtually all types of electronic equipment and equipment in the industrial, computing, automotive, consumer, communications, defense, aerospace, power, and medical markets. Product innovation, successful acquisition strategy, and “one-stop” service have made Vishay a global industry leader.
PowerPAK is a registered trademark of Siliconix Corporation.
The Links: NL6448BC20-18D FP35R12W2T4_B11
