【Introduction】Inverter is a vital energy-saving equipment in various industries. ABB Drives has been committed to creating value for customers with advanced products, technologies and innovative solutions, improving production efficiency and helping the inverter industry upgrade.
ACS180 compact inverter is the latest generation inverter product designed by ABB Beijing. It is small in size, easy to use, stable and reliable, widely used, and has high cost performance. It is a reliable choice for various compact equipment.
The R0 to R2 frames of the ACS180 400V voltage class use IGBT7 technology from Infineon. Taking the ACS180-04x-17A0-4 model as an example, thanks to the application of new technologies, its power density has reached a new level.
Main parameters of ACS180-04x-17A0-4 inverter
Inverter size: 202mm (height) x 120mm (width) x 143mm (depth), which is much lower than similar products of the same power.
Rated current IN=17.0A (rated current during continuous output);
PId=7.5kW, ILD=16.2A (110% overload for 1 minute every 10 minutes);
Phd=5.5kW, IHD=12.6A (150% overload for 1 minute every 10 minutes);
Imax=22.7A (can output for 2 seconds at startup).
When used for 5.5kW heavy-duty applications, no derating is required when the working ambient temperature is below 50°C, and 90% of the rated current can run at 60°C. And the internal integration meets the C3 level EMC filter of IEC61800-3 (adjustable speed electric drive system. Part 3: Electromagnetic compatibility (EMC) requirements and specific test methods).
How does ACS180 achieve “small body, big energy”? This is due to the continuous development of IGBT technology.
IGBT is the core component of frequency converter to realize electric energy conversion. It is like a pair of powerful hands, which controls the opening and closing of current. If the arms are strong and consume less, it will undoubtedly greatly reduce the volume of the inverter and increase the efficiency of the inverter.
The IGBT used in this ACS180 is FP25R12W1T7, which is a 1200V/25A IGBT module. The chip adopts the latest generation of IGBT7 technology from Infineon. Different from the current mainstream IGBT4 technology on the market, IGBT7 adopts a more refined MPT micro-trench gate technology, with higher channel density, thinner chip thickness, carefully designed cell structure and spacing, and optimized parasitic capacitance parameters. , so as to achieve the best switching performance under 5kv/us.
In modern power semiconductor devices, increasing switching speed, switching frequency and power density is the general trend. However, there are differences in device performance requirements due to different specific applications. For motor drive application characteristics, due to the inherent isolation of the motor and cable, the switching slope (dv/dt) is typically limited to the range of 2-10kV/μs, with a typical target of 5kV/μs. In addition, the typical switching frequency (fSW) adopted by the user is also less than 8kHz. This means that for motor drives, the reduction of static losses has become the focus of power semiconductor development, the importance of fast switching and high switching frequency requirements has diminished, and switching losses have become secondary. In response to the above requirements, IGBT7 has been carefully optimized. mainly reflects in:
01 Lower loss
Because of thinner chip thickness and optimized carrier distribution, IGBT greatly reduces the loss of the device, and the saturation voltage drop is 20% lower than that of IGBT4. Turn-off loss is still maintained at the same level as IGBT4. As shown in the figure below, the compromise curve of the T7 is closer to the ideal origin than the previous generation device.
02 Adjustable dv/dt
Unlike mainstream devices such as IGBT4, the trenches in IGBT7 come in many forms: the most common of which is used as an active gate. Second, the MPT structure also enables emitter trenches and dummy gates, both of which are ineffective trenches. The number of these three trenches determines the controllability of the IGBT7, so that the dv/dt of turn-on and turn-off can be adjusted by the gate resistor in a wide range, and within the typical dv/dt range of the inverter (2 -10kV/μs) to achieve the lowest loss.
03 175°C Maximum Operating Junction Temperature
Based on the optimized power module design, when the maximum allowable junction temperature (Tj) of IGBT7 is increased to 175°C, it is 25°C higher than that of IGBT4, which can meet the overload operation requirements of practical applications. The overload conditions are defined as follows:
● Continuous operating junction temperature Tj ≤ 150 °C
● Repeated overload junction temperature Tj ≤ 175 °C, overload time t1 ≤ 60 s
● Overload duty cycle D=t1/T ≤ 20%
From this we can see that IGBT7 can bring the following benefits to the inverter:
Boost the output current of the inverter
The extremely low saturated on-voltage of IGBT7 means that when IGBT4 and IGBT7 of the same specification are used, the loss of the inverter using IGBT7 is lower, so that it can output a larger current; Make the inverter output the same current.
As shown in the figure below, the 25A Easy2B IGBT7 can increase the output current by 35% compared to the 25A Easy2B IGBT4, and the 25A Easy1B IGBT7 can also increase the output current by 16% compared to the 25A Easy2B IGBT4.
Increase the power density of the inverter
The loss of IGBT7 is low and the junction temperature is high (the overload junction temperature is up to 175℃), so the size of the heat sink can be greatly reduced. In comparison with typical conditions, IGBT7 of 25A Easy2B can reduce the heat sink volume by 40% compared with IGBT4 of 25A Easy2B.
”
From punch-through IGBTs to field-stop IGBTs, from planar gates to trench gates, and from trench gates to refined trench gates, generations of IGBTs have been continuously optimized to help inverters achieve lower power consumption and smaller size, and pursue low We never stop on the road of carbon efficiency, let us live together and share the future.
Authors: Infineon Integrated Circuits (Beijing) Co., Ltd.: Jia Zhao, Beijing ABB Electric Drive Systems Co., Ltd.: Jia Yiran, Li Junfeng
【Introduction】Inverter is a vital energy-saving equipment in various industries. ABB Drives has been committed to creating value for customers with advanced products, technologies and innovative solutions, improving production efficiency and helping the inverter industry upgrade.
ACS180 compact inverter is the latest generation inverter product designed by ABB Beijing. It is small in size, easy to use, stable and reliable, widely used, and has high cost performance. It is a reliable choice for various compact equipment.
The R0 to R2 frames of the ACS180 400V voltage class use IGBT7 technology from Infineon. Taking the ACS180-04x-17A0-4 model as an example, thanks to the application of new technologies, its power density has reached a new level.
Main parameters of ACS180-04x-17A0-4 inverter
Inverter size: 202mm (height) x 120mm (width) x 143mm (depth), which is much lower than similar products of the same power.
Rated current IN=17.0A (rated current during continuous output);
PId=7.5kW, ILD=16.2A (110% overload for 1 minute every 10 minutes);
Phd=5.5kW, IHD=12.6A (150% overload for 1 minute every 10 minutes);
Imax=22.7A (can output for 2 seconds at startup).
When used for 5.5kW heavy-duty applications, no derating is required when the working ambient temperature is below 50°C, and 90% of the rated current can run at 60°C. And the internal integration meets the C3 level EMC filter of IEC61800-3 (adjustable speed electric drive system. Part 3: Electromagnetic compatibility (EMC) requirements and specific test methods).
How does ACS180 achieve “small body, big energy”? This is due to the continuous development of IGBT technology.
IGBT is the core component of frequency converter to realize electric energy conversion. It is like a pair of powerful hands, which controls the opening and closing of current. If the arms are strong and consume less, it will undoubtedly greatly reduce the volume of the inverter and increase the efficiency of the inverter.
The IGBT used in this ACS180 is FP25R12W1T7, which is a 1200V/25A IGBT module. The chip adopts the latest generation of IGBT7 technology from Infineon. Different from the current mainstream IGBT4 technology on the market, IGBT7 adopts a more refined MPT micro-trench gate technology, with higher channel density, thinner chip thickness, carefully designed cell structure and spacing, and optimized parasitic capacitance parameters. , so as to achieve the best switching performance under 5kv/us.
In modern power semiconductor devices, increasing switching speed, switching frequency and power density is the general trend. However, there are differences in device performance requirements due to different specific applications. For motor drive application characteristics, due to the inherent isolation of the motor and cable, the switching slope (dv/dt) is typically limited to the range of 2-10kV/μs, with a typical target of 5kV/μs. In addition, the typical switching frequency (fSW) adopted by the user is also less than 8kHz. This means that for motor drives, the reduction of static losses has become the focus of power semiconductor development, the importance of fast switching and high switching frequency requirements has diminished, and switching losses have become secondary. In response to the above requirements, IGBT7 has been carefully optimized. mainly reflects in:
01 Lower loss
Because of thinner chip thickness and optimized carrier distribution, IGBT greatly reduces the loss of the device, and the saturation voltage drop is 20% lower than that of IGBT4. Turn-off loss is still maintained at the same level as IGBT4. As shown in the figure below, the compromise curve of the T7 is closer to the ideal origin than the previous generation device.
02 Adjustable dv/dt
Unlike mainstream devices such as IGBT4, the trenches in IGBT7 come in many forms: the most common of which is used as an active gate. Second, the MPT structure also enables emitter trenches and dummy gates, both of which are ineffective trenches. The number of these three trenches determines the controllability of the IGBT7, so that the dv/dt of turn-on and turn-off can be adjusted by the gate resistor in a wide range, and within the typical dv/dt range of the inverter (2 -10kV/μs) to achieve the lowest loss.
03 175°C Maximum Operating Junction Temperature
Based on the optimized power module design, when the maximum allowable junction temperature (Tj) of IGBT7 is increased to 175°C, it is 25°C higher than that of IGBT4, which can meet the overload operation requirements of practical applications. The overload conditions are defined as follows:
● Continuous operating junction temperature Tj ≤ 150 °C
● Repeated overload junction temperature Tj ≤ 175 °C, overload time t1 ≤ 60 s
● Overload duty cycle D=t1/T ≤ 20%
From this we can see that IGBT7 can bring the following benefits to the inverter:
Boost the output current of the inverter
The extremely low saturated on-voltage of IGBT7 means that when IGBT4 and IGBT7 of the same specification are used, the loss of the inverter using IGBT7 is lower, so that it can output a larger current; Make the inverter output the same current.
As shown in the figure below, the 25A Easy2B IGBT7 can increase the output current by 35% compared to the 25A Easy2B IGBT4, and the 25A Easy1B IGBT7 can also increase the output current by 16% compared to the 25A Easy2B IGBT4.
Increase the power density of the inverter
The loss of IGBT7 is low and the junction temperature is high (the overload junction temperature is up to 175℃), so the size of the heat sink can be greatly reduced. In comparison with typical conditions, IGBT7 of 25A Easy2B can reduce the heat sink volume by 40% compared with IGBT4 of 25A Easy2B.
”
From punch-through IGBTs to field-stop IGBTs, from planar gates to trench gates, and from trench gates to refined trench gates, generations of IGBTs have been continuously optimized to help inverters achieve lower power consumption and smaller size, and pursue low We never stop on the road of carbon efficiency, let us live together and share the future.
Authors: Infineon Integrated Circuits (Beijing) Co., Ltd.: Jia Zhao, Beijing ABB Electric Drive Systems Co., Ltd.: Jia Yiran, Li Junfeng
The Links: MG150Q2YS51 MIG75J7CSB1W
